Λεπτομέρειες προιόντος
Όροι πληρωμής & ναυτιλίας
Description: DIODE SIL CARB 650V 20A TO247-3
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Obsolete |
Current - Reverse Leakage @ Vr: |
120 µA @ 650 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.7 V @ 20 A |
Package: |
Tube |
Series: |
Automotive, AEC-Q100/101, CoolSiC™ |
Capacitance @ Vr, F: |
584pF @ 1V, 1MHz |
Supplier Device Package: |
PG-TO247-3-41 |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Infineon Technologies |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-40°C ~ 175°C |
Package / Case: |
TO-247-3 |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Current - Average Rectified (Io): |
20A |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
AIDW20 |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Obsolete |
Current - Reverse Leakage @ Vr: |
120 µA @ 650 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.7 V @ 20 A |
Package: |
Tube |
Series: |
Automotive, AEC-Q100/101, CoolSiC™ |
Capacitance @ Vr, F: |
584pF @ 1V, 1MHz |
Supplier Device Package: |
PG-TO247-3-41 |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Infineon Technologies |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-40°C ~ 175°C |
Package / Case: |
TO-247-3 |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Current - Average Rectified (Io): |
20A |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
AIDW20 |